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SI4464DY-T1-E3
Power MOSFET, N Channel, 200 V, 1.7 A, 0.24 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $0.969 |
| 4000+ | $0.875 |
| 6000+ | $0.843 |
| 10000+ | $0.812 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,422.50
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4464DY-T1-E3
Newark Part No.35K3467
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.24ohm
On Resistance Rds(on)0.195ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.24ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
On Resistance Rds(on)
0.195ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate