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SI4564DY-T1-GE3
MOSFET, VISHAY SI4564DY-T1-GE3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4564DY-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel86R3889
Re-Reel64T4069
Cut Tape64T4069
Your Part Number
3,449 In Stock
5,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $2.530 | $12.65 |
| Total Price | $12.65 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $2.530 |
| 10+ | $1.770 |
| 25+ | $1.570 |
| 50+ | $1.380 |
| 100+ | $1.190 |
| 250+ | $1.070 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.899 |
| 4000+ | $0.807 |
| 6000+ | $0.779 |
| 10000+ | $0.762 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4564DY-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Full Reel86R3889
Re-Reel64T4069
Cut Tape64T4069
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id10A
Drain Source Voltage Vds P Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.0145ohm
Drain Source On State Resistance P Channel0.0145ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
40V
Continuous Drain Current Id P Channel
10A
Drain Source On State Resistance P Channel
0.0145ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.0145ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate