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SI4838BDY-T1-GE3.
Power MOSFET, N Channel, 12 V, 34 A, 0.0021 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.170 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,925.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4838BDY-T1-GE3.
Newark Part No.28AC2147
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id34A
On Resistance Rds(on)0.0021ohm
Drain Source On State Resistance0.0021ohm
Transistor MountingSurface Mount
Power Dissipation Pd5.7W
Rds(on) Test Voltage4.5V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max400mV
Power Dissipation5.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.0021ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
34A
Drain Source On State Resistance
0.0021ohm
Power Dissipation Pd
5.7W
Transistor Case Style
SOIC
Power Dissipation
5.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate