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SI4848DY-T1-E3
Power MOSFET, N Channel, 150 V, 2.7 A, 85 mohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.852 |
| 5000+ | $0.840 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,130.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4848DY-T1-E3
Newark Part No.73W9414
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id2.7A
Drain Source On State Resistance85mohm
On Resistance Rds(on)0.068ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
- N-channel 150V (D-S) TrenchFET® power MOSFET
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
85mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.7A
On Resistance Rds(on)
0.068ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
1.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate