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SI4850EY-T1-E3
Power MOSFET, N Channel, 60 V, 8.5 A, 0.022 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 33 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $1.020 |
| 5000+ | $1.000 |
| 10000+ | $0.990 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,550.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4850EY-T1-E3
Newark Part No.35K3477
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.018ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd3.3W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation3.3W
No. of Pins8Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4850EY-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET with reduced total dynamic gate charge (Qg).
- Fast switching
- 175°C Maximum junction temperature
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.3W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
8.5A
On Resistance Rds(on)
0.018ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation
3.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate