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SI4894BDY-T1-E3
Power MOSFET, N Channel, 30 V, 12 A, 11 mohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.040 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$2,600.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4894BDY-T1-E3
Newark Part No.65K1934
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.009ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd3W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation3W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
11mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.009ohm
Rds(on) Test Voltage
20V
Transistor Case Style
SOIC
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate