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SI4894BDY-T1-GE3
Power MOSFET, N Channel, 30 V, 12 A, 11 mohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.849 |
| 10+ | $0.849 |
| 25+ | $0.849 |
| 50+ | $0.849 |
| 100+ | $0.849 |
| 250+ | $0.849 |
| 500+ | $0.849 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4894BDY-T1-GE3
Newark Part No.26R1892
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.016ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.4W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation1.4W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
11mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.4W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.016ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation
1.4W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability