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SI4946CDY-T1-GE3
Dual MOSFET, N Channel, 60 V, 6.1 A, 0.033 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.710 |
| 10+ | $1.130 |
| 25+ | $1.090 |
| 50+ | $0.934 |
| 100+ | $0.782 |
| 250+ | $0.777 |
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Multiple: 1
$1.71
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4946CDY-T1-GE3
Newark Part No.50AC9666
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id6.1A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel6.1A
Continuous Drain Current Id P Channel6.1A
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel0.033ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.8W
Power Dissipation P Channel2.8W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
Dual N-channel 60V (D-S) MOSFET suitable for use in DC/DC converter, load switch, inverters and circuit protection applications.
- TrenchFET® power MOSFET
- 100% Rg tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
6.1A
Drain Source On State Resistance P Channel
0.033ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.8W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
6.1A
Continuous Drain Current Id N Channel
6.1A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate