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SI7174DP-T1-GE3
Power MOSFET, N Channel, 75 V, 60 A, 0.007 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI7174DP-T1-GE3
Newark Part No.16P3829
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7174DP-T1-GE3
Newark Part No.16P3829
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id60A
On Resistance Rds(on)0.007ohm
Drain Source On State Resistance0.007ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd6.25W
Gate Source Threshold Voltage Max4.5V
Power Dissipation6.25W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead
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Product Overview
The SI7174DP-T1-GE3 is a 75VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and synchronous rectification applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.007ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.007ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6.25W
Power Dissipation
6.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate