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SI7456DDP-T1-GE3
Power MOSFET, N Channel, 100 V, 27.8 A, 23 mohm, PowerPAK SO, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.450 |
| 10+ | $1.250 |
| 25+ | $1.210 |
| 50+ | $1.170 |
| 100+ | $1.140 |
| 500+ | $1.090 |
| 1000+ | $1.080 |
Price for:Each
Minimum: 1
Multiple: 1
$1.45
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7456DDP-T1-GE3
Newark Part No.63W4148
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id27.8A
Drain Source On State Resistance23mohm
On Resistance Rds(on)0.017ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation Pd35.7W
Power Dissipation35.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
N-channel 100V (D-S) MOSFET for use in DC/DC primary side switch, telecom/server 48V, full/half-bridge DC/DC, industrial and synchronous rectification.
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
23mohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation Pd
35.7W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
27.8A
On Resistance Rds(on)
0.017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
Power Dissipation
35.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate