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SI7617DN-T1-GE3
Power MOSFET, P Channel, 30 V, 35 A, 0.0123 ohm, PowerPAK 1212, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.100 |
| 25+ | $0.942 |
| 50+ | $0.849 |
| 100+ | $0.770 |
| 250+ | $0.646 |
| 500+ | $0.571 |
| 1000+ | $0.497 |
| 2500+ | $0.477 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7617DN-T1-GE3
Newark Part No.49AM1990
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0123ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
35A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0123ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability