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SI7716ADN-T1-GE3
Power MOSFET, N Channel, 30 V, 16 A, 0.0135 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.130 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$3,390.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7716ADN-T1-GE3
Newark Part No.18X0024
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
On Resistance Rds(on)0.0105ohm
Drain Source On State Resistance0.0135ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd27.7W
Gate Source Threshold Voltage Max2.5V
Transistor Case StylePowerPAK 1212
Power Dissipation27.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI7716ADN-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0105ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
27.7W
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.0135ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
27.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate