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SI7788DP-T1-GE3
Power MOSFET, N Channel, 30 V, 50 A, 0.0041 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $1.800 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$5,400.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7788DP-T1-GE3
Newark Part No.16P3869
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0041ohm
On Resistance Rds(on)0.0041ohm
Transistor MountingSurface Mount
Power Dissipation Pd5.2W
Rds(on) Test Voltage20V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0041ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.0041ohm
Power Dissipation Pd
5.2W
Transistor Case Style
SOIC
Power Dissipation
5.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate