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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Quantity | Price |
---|---|
1+ | $4.010 |
25+ | $3.480 |
100+ | $2.910 |
500+ | $2.730 |
1000+ | $1.950 |
2500+ | $1.950 |
5000+ | $1.940 |
10000+ | $1.910 |
Price for:Each
Minimum: 1
Multiple: 1
$4.01
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7852DP-T1-GE3
Newark Part No.63W4151
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id12.5A
On Resistance Rds(on)0.0135ohm
Drain Source On State Resistance0.0165ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd1.9W
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- N-channel 80V (D-S) TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package with Low 1.07mm profile
- PWM optimized for fast switching
- 100 % Rg tested
- Used in primary side switch for DC/DC applications
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0135ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.9W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
12.5A
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate