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SI7884BDP-T1-GE3
Power MOSFET, N Channel, 40 V, 58 A, 0.0075 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.150 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$9,450.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7884BDP-T1-GE3
Newark Part No.16P3877
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id58A
Drain Source On State Resistance0.0075ohm
On Resistance Rds(on)0.0062ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd46W
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK SO
Power Dissipation46W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7884BDP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0075ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
46W
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
58A
On Resistance Rds(on)
0.0062ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
Power Dissipation
46W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate