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SI9933CDY-T1-GE3
Dual MOSFET, P Channel, 20 V, 4 A
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| Quantity | Price |
|---|---|
| 1+ | $0.480 |
| 10+ | $0.478 |
| 25+ | $0.478 |
| 50+ | $0.478 |
| 100+ | $0.478 |
| 250+ | $0.438 |
| 500+ | $0.423 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.48
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9933CDY-T1-GE3
Newark Part No.55R1932
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.048ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.048ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
4A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
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1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate