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SIA975DJ-T1-GE3.
Dual MOSFET, Dual P Channel, 12 V, 4.5 A
Image is for illustrative purposes only. Please refer to product description.
12,000 In Stock
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Delivery in 2-4 Business Days
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| Quantity | Price |
|---|---|
| 1+ | $0.398 |
| 5000+ | $0.388 |
| 10000+ | $0.359 |
| 20000+ | $0.334 |
| 30000+ | $0.312 |
| 50000+ | $0.298 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,194.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA975DJ-T1-GE3.
Newark Part No.28AC2100
Technical Datasheet
Channel TypeDual P Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel12V
Drain Source Voltage Vds12V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel4.1mohm
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
Dual P Channel
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
12V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
4.1mohm
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate