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SIDR668DP-T1-GE3
MOSFET, N-CH, 100V, 95A, 150DEG C, 125W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIDR668DP-T1-GE3
Newark Part No.78AC6505
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 32 week(s)
| Quantity | Price |
|---|---|
| 1+ | $5.290 |
| 10+ | $4.310 |
| 25+ | $3.980 |
| 50+ | $3.660 |
| 100+ | $3.330 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.29
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR668DP-T1-GE3
Newark Part No.78AC6505
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id95A
Drain Source On State Resistance0.0048ohm
On Resistance Rds(on)0.004ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.4V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0048ohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
3.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
95A
On Resistance Rds(on)
0.004ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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