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| Quantity | Price |
|---|---|
| 1+ | $6.120 |
| 10+ | $5.240 |
| 25+ | $5.110 |
| 50+ | $4.950 |
| 100+ | $4.810 |
| 500+ | $4.560 |
| 1000+ | $4.480 |
Price for:Each
Minimum: 1
Multiple: 1
$6.12
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB125N60EF-GE3
Newark Part No.77AH0218
Product RangeEF
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id25A
Drain Source On State Resistance0.125ohm
On Resistance Rds(on)0.109ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd179W
Power Dissipation179W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeEF
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.125ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
179W
No. of Pins
3Pins
Product Range
EF
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.109ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
Power Dissipation
179W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability