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| Quantity | Price |
|---|---|
| 1+ | $4.130 |
| 10+ | $3.700 |
| 50+ | $3.350 |
| 100+ | $3.200 |
| 500+ | $2.380 |
| 1000+ | $2.370 |
| 2500+ | $2.350 |
| 5000+ | $2.340 |
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Multiple: 1
$4.13
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHD180N60E-GE3
Newark Part No.41AH4756
Product RangeE
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id19A
On Resistance Rds(on)0.17ohm
Drain Source On State Resistance0.195ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation156W
Power Dissipation Pd156W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.17ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
156W
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19A
Drain Source On State Resistance
0.195ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Alternatives for SIHD180N60E-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability