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| Quantity | Price |
|---|---|
| 1+ | $3.810 |
| 10+ | $2.600 |
| 25+ | $2.380 |
| 50+ | $2.200 |
| 100+ | $2.010 |
| 500+ | $1.920 |
| 1000+ | $1.890 |
Price for:Each
Minimum: 1
Multiple: 1
$3.81
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHD7N60E-GE3
Newark Part No.63W4108
Product RangeE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id7A
On Resistance Rds(on)0.5ohm
Drain Source On State Resistance0.5ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd78W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation78W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.5ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
78W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source On State Resistance
0.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability