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Quantity | Price |
---|---|
1+ | $8.190 |
10+ | $5.910 |
25+ | $5.870 |
50+ | $5.810 |
100+ | $5.770 |
500+ | $5.330 |
1000+ | $4.690 |
Price for:Each
Minimum: 1
Multiple: 1
$8.19
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG22N60E-GE3
Newark Part No.19X1938
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id21A
Drain Source On State Resistance0.18ohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation227W
Power Dissipation Pd227W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
E series power MOSFET suitable for use in server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), lighting (High-intensity discharge (HID), fluorescent ballast lighting), industrial (welding, induction heating, motor drives, battery chargers, renewable energy and solar (PV inverters).
- Low figure-of-merit (FOM) Ron x Qi
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qi)
- Avalanche energy rated (UIS)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.18ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
227W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
21A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate