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| Quantity | Price |
|---|---|
| 1+ | $22.870 |
| 10+ | $17.560 |
| 25+ | $16.420 |
| 50+ | $15.290 |
| 100+ | $14.150 |
| 250+ | $13.960 |
| 500+ | $13.750 |
Price for:Each
Minimum: 1
Multiple: 1
$22.87
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG64N65E-GE3
Newark Part No.26AK5801
Product RangeE Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id64A
On Resistance Rds(on)0.039ohm
Drain Source On State Resistance0.047ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation520W
Power Dissipation Pd520W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.039ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
520W
No. of Pins
3Pins
Product Range
E Series
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
64A
Drain Source On State Resistance
0.047ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
520W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability