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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $22.660 |
| 10+ | $17.200 |
| 25+ | $17.070 |
| 50+ | $16.960 |
| 100+ | $16.840 |
| 250+ | $15.500 |
| 500+ | $14.150 |
Price for:Each
Minimum: 1
Multiple: 1
$22.66
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG73N60E-GE3
Newark Part No.63W4113
Product RangeE
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id73A
Drain Source On State Resistance0.039ohm
On Resistance Rds(on)0.032ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation520W
Power Dissipation Pd520W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
- E Series Power MOSFET
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Used in SMPS, PFC and lighting
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.039ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
520W
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
73A
On Resistance Rds(on)
0.032ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
520W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate