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SIJ186DP-T1-GE3
MOSFET, N-CH, 79.4A, 60V, POWERPAK SO
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIJ186DP-T1-GE3
Newark Part No.99AC9565
Product RangeTrenchFET Gen IV
Your Part Number
Technical Datasheet
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Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.480 |
| 25+ | $2.170 |
| 100+ | $1.760 |
| 500+ | $1.560 |
| 1000+ | $1.210 |
| 2500+ | $1.160 |
| 5000+ | $1.120 |
| 10000+ | $1.100 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIJ186DP-T1-GE3
Newark Part No.99AC9565
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id79.4A
On Resistance Rds(on)0.0037ohm
Drain Source On State Resistance4500µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd57W
Gate Source Threshold Voltage Max3.6V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0037ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.6V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
79.4A
Drain Source On State Resistance
4500µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
57W
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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