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SIR186DP-T1-RE3
Power MOSFET, N Channel, 60 V, 60 A, 0.0045 ohm, PowerPAK SO, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.710 |
| 10+ | $1.850 |
| 25+ | $1.700 |
| 50+ | $1.550 |
Full Reel
| Quantity | Price |
|---|---|
| 1+ | $1.220 |
| 1000+ | $1.190 |
| 2000+ | $1.100 |
| 4000+ | $1.020 |
| 6000+ | $0.992 |
| 10000+ | $0.976 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR186DP-T1-RE3
Newark Part No.37AC0918
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
On Resistance Rds(on)0.0037ohm
Drain Source On State Resistance4500µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation57W
Power Dissipation Pd57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (07-Nov-2024)
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Product Overview
N-channel 60V (D-S) MOSFET suitable for use in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qi figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0037ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
57W
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
4500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
Power Dissipation Pd
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate