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SIR426DP-T1-GE3
Power MOSFET, N Channel, 40 V, 30 A, 0.0105 ohm, SOIC, Surface Mount
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3,000 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.240 |
| 25+ | $1.420 |
| 50+ | $1.180 |
| 100+ | $0.943 |
| 250+ | $0.859 |
| 500+ | $0.773 |
| 1000+ | $0.677 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.24
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR426DP-T1-GE3
Newark Part No.49AM1978
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0105ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation41.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
41.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0105ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability