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SIR692DP-T1-RE3
Power MOSFET, N Channel, 250 V, 24.2 A, 0.063 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIR692DP-T1-RE3
Newark Part No.15AC8648
Product RangeThunderFET
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.882 |
| 25+ | $0.882 |
| 100+ | $0.882 |
| 500+ | $0.882 |
| 1000+ | $0.882 |
| 2500+ | $0.882 |
| 5000+ | $0.882 |
| 10000+ | $0.882 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR692DP-T1-RE3
Newark Part No.15AC8648
Product RangeThunderFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id24.2A
On Resistance Rds(on)0.052ohm
Drain Source On State Resistance0.063ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation104W
Power Dissipation Pd104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeThunderFET
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
N-channel 250V (D-S) MOSFET suitable for use in DC/DC converters, primary side switching, synchronous rectification and DC/AC and inverters.
- ThunderFET® technology optimizes balance of RDS(on), Qi, Qsw and Qoss
- 100% Rg and UIS tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.052ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
No. of Pins
8Pins
Product Range
ThunderFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
24.2A
Drain Source On State Resistance
0.063ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate