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Quantity | Price |
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25+ | $0.752 |
50+ | $0.712 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR836DP-T1-GE3
Newark Part No.57AJ0405
Product RangeTrench
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id21A
Drain Source On State Resistance0.019ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation15.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrench
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
15.6W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
Trench
SVHC
Lead (21-Jan-2025)
Alternatives for SIR836DP-T1-GE3
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability