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Available to Order
Manufacturer Standard Lead Time: 34 week(s)
Quantity | Price |
---|---|
1000+ | $2.160 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$6,480.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR882DP-T1-GE3
Newark Part No.94T2661
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0087ohm
On Resistance Rds(on)0.0071ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5.4W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max1.2V
Power Dissipation5.4W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SIR882DP-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Communications & Networking
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0087ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.4W
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0071ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
Power Dissipation
5.4W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate