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SIRA00DP-T1-GE3
MOSFET, 30V, 60A, PPAKSO-8
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1,956 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.340 |
| 10+ | $2.490 |
| 25+ | $2.270 |
| 50+ | $2.050 |
| 100+ | $1.820 |
| 250+ | $1.670 |
| 500+ | $1.510 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.34
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA00DP-T1-GE3
Newark Part No.05W5775
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
Drain Source On State Resistance0.001ohm
On Resistance Rds(on)830µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.1V
Power Dissipation104W
Power Dissipation Pd104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.001ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
830µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
Power Dissipation Pd
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability