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SIRA00DP-T1-GE3
Power MOSFET, N Channel, 30 V, 100 A, 0.001 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIRA00DP-T1-GE3
Newark Part No.
Full Reel99W9548
Cut Tape70AC6478
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 53 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $2.340 | $7,020.00 |
| Total Price | $7,020.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 100+ | $2.340 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $1.550 |
| 4000+ | $1.390 |
| 6000+ | $1.340 |
| 10000+ | $1.290 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA00DP-T1-GE3
Newark Part No.
Full Reel99W9548
Cut Tape70AC6478
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance0.001ohm
On Resistance Rds(on)830µohm
Transistor MountingSurface Mount
Power Dissipation Pd104W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Transistor Case StylePowerPAK SO
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The SIRA00DP-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, O-ring, high power density DC-to-DC, VRMs and embedded DC-to-DC applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.001ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
830µohm
Power Dissipation Pd
104W
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
104W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate