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SIRA22DP-T1-RE3
MOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIRA22DP-T1-RE3
Newark Part No.81AC2782
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.190 |
| 10+ | $2.300 |
| 25+ | $2.100 |
| 50+ | $1.920 |
| 100+ | $1.730 |
| 250+ | $1.630 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.19
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA22DP-T1-RE3
Newark Part No.81AC2782
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id60A
Drain Source On State Resistance760µohm
On Resistance Rds(on)630µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation83.3W
Power Dissipation Pd83.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
Drain Source On State Resistance
760µohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
83.3W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
630µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
83.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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