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SIRA88BDP-T1-GE3
Power MOSFET, N Channel, 30 V, 40 A, 0.00683 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIRA88BDP-T1-GE3
Newark Part No.38AH5932
Product RangeTrenchFET Gen IV
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.050 |
| 10+ | $0.654 |
| 25+ | $0.587 |
| 50+ | $0.520 |
| 100+ | $0.455 |
| 250+ | $0.404 |
| 500+ | $0.352 |
| 1000+ | $0.317 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA88BDP-T1-GE3
Newark Part No.38AH5932
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
Drain Source On State Resistance0.00683ohm
On Resistance Rds(on)0.0055ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd17W
Gate Source Threshold Voltage Max2.4V
Power Dissipation17W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.00683ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.0055ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
17W
Power Dissipation
17W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate