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SIS402DN-T1-GE3
Power MOSFET, N Channel, 30 V, 35 A, 0.006 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $1.140 |
| 6000+ | $1.130 |
| 12000+ | $1.110 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$3,420.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS402DN-T1-GE3
Newark Part No.16P3666
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35A
Drain Source On State Resistance0.006ohm
On Resistance Rds(on)0.0048ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK 1212
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.006ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.0048ohm
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
3V
Power Dissipation
3.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate