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SIS434DN-T1-GE3
Power MOSFET, N Channel, 40 V, 35 A, 0.0063 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $0.651 |
| 4000+ | $0.588 |
| 6000+ | $0.569 |
| 10000+ | $0.556 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,953.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS434DN-T1-GE3
Newark Part No.35R0027
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0063ohm
On Resistance Rds(on)0.0063ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Transistor Case StylePowerPAK 1212
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The SIS434DN-T1-GE3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for POL applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0063ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.0063ohm
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
3.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate