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Available to Order
Manufacturer Standard Lead Time: 41 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.150 |
| 10+ | $2.300 |
| 25+ | $2.140 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.15
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH116DN-T1-GE3
Newark Part No.99AC0541
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id10.5A
On Resistance Rds(on)0.0065ohm
Drain Source On State Resistance0.0078ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.5W
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0065ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
10.5A
Drain Source On State Resistance
0.0078ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.5W
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability