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SISS22LDN-T1-GE3
MOSFET, N-CH, 60V, 92.5A, 150DEG C ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSISS22LDN-T1-GE3
Newark Part No.42AH1977
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.200 |
| 25+ | $1.940 |
| 100+ | $1.590 |
| 500+ | $1.420 |
| 1000+ | $1.120 |
| 2500+ | $1.080 |
| 5000+ | $1.040 |
| 10000+ | $1.030 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$2.20
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS22LDN-T1-GE3
Newark Part No.42AH1977
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id92.5A
On Resistance Rds(on)0.00291ohm
Drain Source On State Resistance0.00365ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd65.7W
Gate Source Threshold Voltage Max2.5V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.00291ohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
92.5A
Drain Source On State Resistance
0.00365ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
65.7W
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability