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SQJ144EP-T1_GE3
MOSFET, N-CH, 40V, 130A, POWERPAK SO-8L ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSQJ144EP-T1_GE3
Newark Part No.93AH0480
Product RangeTrenchFET Gen IV
Technical Datasheet
2,490 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.890 |
| 10+ | $1.320 |
| 25+ | $1.230 |
| 50+ | $1.140 |
| 100+ | $1.050 |
| 250+ | $0.965 |
| 500+ | $0.882 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.89
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ144EP-T1_GE3
Newark Part No.93AH0480
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id130A
On Resistance Rds(on)0.0036ohm
Drain Source On State Resistance4600µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation148W
Power Dissipation Pd148W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0036ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
148W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (07-Nov-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
130A
Drain Source On State Resistance
4600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
148W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability