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SQJ951EP-T1_BE3
Dual MOSFET, P Channel, 30 V, 30 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJ951EP-T1_BE3
Newark Part No.82AH6210
Product RangeTrenchFET Series
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ951EP-T1_BE3
Newark Part No.82AH6210
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel30A
Transistor Case StylePowerPAK SO
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.014ohm
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel56W
Operating Temperature Max175°C
QualificationAEC-Q101
Product RangeTrenchFET Series
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
56W
Qualification
AEC-Q101
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id
30A
Continuous Drain Current Id N Channel
-
Transistor Case Style
PowerPAK SO
Drain Source On State Resistance P Channel
0.014ohm
Power Dissipation N Channel
-
Operating Temperature Max
175°C
Product Range
TrenchFET Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate