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SUD50N04-8M8P-4GE3
Power MOSFET, TrenchFET, N Channel, 40 V, 50 A, 0.0088 ohm, TO-252AA, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.426 |
| 25+ | $0.426 |
| 100+ | $0.426 |
| 500+ | $0.426 |
| 1000+ | $0.426 |
| 2500+ | $0.426 |
| 10000+ | $0.426 |
| 25000+ | $0.426 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD50N04-8M8P-4GE3
Newark Part No.72R4257
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0088ohm
On Resistance Rds(on)0.0069ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd48.1W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation48.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The SUD50N04-8M8P-4GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for backlight inverter for LCD display, DC to DC converter and full bridge converter applications.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
- PWM Optimised
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0088ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
48.1W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.0069ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
48.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability