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| Quantity | Price |
|---|---|
| 1+ | $2.880 |
| 10+ | $2.650 |
| 25+ | $2.470 |
| 50+ | $2.460 |
| 100+ | $2.460 |
| 250+ | $2.300 |
| 500+ | $2.270 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.88
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUM80090E-GE3
Newark Part No.86Y1092
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id128A
Drain Source On State Resistance9000µohm
On Resistance Rds(on)0.0075ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation375W
Power Dissipation Pd375W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Alternatives for SUM80090E-GE3
1 Product Found
Product Overview
N-channel 150V (D-S) MOSFET suitable for use in power supply (uninterruptible power supplies, AC/DC switch-mode power supplies, lighting), synchronous rectification, DC/DC converter, motor drive switch, DC/AC inverter, solar micro inverter, class D audio amplifier and battery management.
- ThunderFET® power MOSFET
- Maximum 175°C junction temperature
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
9000µohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
375W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
128A
On Resistance Rds(on)
0.0075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
375W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate