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VS-GT100TP60N
IGBT Module, Dual [Half Bridge], 160 A, 1.65 V, 417 W, 175 °C, INT-A-PAK
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-GT100TP60N
Newark Part No.43X1829
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current160A
DC Collector Current160A
Collector Emitter Saturation Voltage Vce(on)1.65V
Collector Emitter Saturation Voltage1.65V
Power Dissipation417W
Power Dissipation Pd417W
Junction Temperature, Tj Max175°C
Operating Temperature Max175°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleINT-A-PAK
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max600V
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual N Channel
Continuous Collector Current
160A
Collector Emitter Saturation Voltage Vce(on)
1.65V
Power Dissipation
417W
Junction Temperature, Tj Max
175°C
Collector Emitter Voltage V(br)ceo
600V
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
160A
Collector Emitter Saturation Voltage
1.65V
Power Dissipation Pd
417W
Operating Temperature Max
175°C
Transistor Case Style
INT-A-PAK
No. of Pins
7Pins
IGBT Technology
Trench
Product Range
-
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate