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VS-GT100TP60N
IGBT Module, Dual [Half Bridge], 160 A, 1.65 V, 417 W, 175 °C, INT-A-PAK
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Modèle arrêté
Informations produit
FabricantVISHAY
Réf. FabricantVS-GT100TP60N
Code Commande43X1829
Fiche technique
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current160A
DC Collector Current160A
Collector Emitter Saturation Voltage Vce(on)1.65V
Collector Emitter Saturation Voltage1.65V
Power Dissipation417W
Power Dissipation Pd417W
Junction Temperature, Tj Max175°C
Operating Temperature Max175°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleINT-A-PAK
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max600V
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Dual N Channel
Continuous Collector Current
160A
Collector Emitter Saturation Voltage Vce(on)
1.65V
Power Dissipation
417W
Junction Temperature, Tj Max
175°C
Collector Emitter Voltage V(br)ceo
600V
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
160A
Collector Emitter Saturation Voltage
1.65V
Power Dissipation Pd
417W
Operating Temperature Max
175°C
Transistor Case Style
INT-A-PAK
No. of Pins
7Pins
IGBT Technology
Trench
Product Range
-
Documents techniques (3)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit