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NXPSC08650BJ
Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoNXPSC08650BJ
Newark Part No.65AC6171
Technical Datasheet
No Longer Available
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoNXPSC08650BJ
Newark Part No.65AC6171
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current8A
Total Capacitive Charge-
Diode Case StyleTO-263 (D2PAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCTo Be Advised
Product Overview
NXPSC08650BJ is a silicon carbide diode. This is designed for high frequency switched-mode power supplies. Applications include power factor correction, telecom / server SMPS, UPS, PV inverter, PC silver box, LED / OLED TV, motor drives.
- Highly stable switching performance, high forward surge capability IFSM
- Extremely fast reverse recovery time, superior in efficiency to silicon diode alternatives
- Reduced losses in associated MOSFET, reduced EMI
- Reduced cooling requirements
- 1.5V typical forward voltage (IF = 8A, Tj= 25°C)
- 13nC typical recovered charge (IF = 8A, dIF/dt = 500A/μs, VR = 400V, Tj= 25°C)
- 650V max repetitive peak reverse voltage
- 8A max average forward current (δ = 0.5, square-wave pulse, Tmb ≤ 112°C)
- 3 pin TO263 package, 175°C junction temperature
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
-
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
To Be Advised
Diode Configuration
Single
Average Forward Current
8A
Diode Case Style
TO-263 (D2PAK)
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate