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NXPSC08650BJ
Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-263 (D2PAK)
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FabricantWEEN SEMICONDUCTORS
Réf. FabricantNXPSC08650BJCopie
Code Commande65AC6171
Votre numéro de pièce
Modèle arrêté
Informations produit
FabricantWEEN SEMICONDUCTORS
Réf. FabricantNXPSC08650BJCopie
Code Commande65AC6171
Fiche technique
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current8A
Total Capacitive Charge-
Diode Case StyleTO-263 (D2PAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCTo Be Advised
Aperçu du produit
NXPSC08650BJ is a silicon carbide diode. This is designed for high frequency switched-mode power supplies. Applications include power factor correction, telecom / server SMPS, UPS, PV inverter, PC silver box, LED / OLED TV, motor drives.
- Highly stable switching performance, high forward surge capability IFSM
- Extremely fast reverse recovery time, superior in efficiency to silicon diode alternatives
- Reduced losses in associated MOSFET, reduced EMI
- Reduced cooling requirements
- 1.5V typical forward voltage (IF = 8A, Tj= 25°C)
- 13nC typical recovered charge (IF = 8A, dIF/dt = 500A/μs, VR = 400V, Tj= 25°C)
- 650V max repetitive peak reverse voltage
- 8A max average forward current (δ = 0.5, square-wave pulse, Tmb ≤ 112°C)
- 3 pin TO263 package, 175°C junction temperature
Spécifications techniques
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
-
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
To Be Advised
Diode Configuration
Single
Average Forward Current
8A
Diode Case Style
TO-263 (D2PAK)
Operating Temperature Max
175°C
Qualification
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit