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WMSC006H12B2S6T
Silicon Carbide MOSFET, Half Bridge, N Channel, 200 A, 1.2 kV, 0.01 ohm, WeEnPACK-B2
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWMSC006H12B2S6T
Newark Part No.27AM4930
Technical Datasheet
Available to Order
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| Quantity | Price |
|---|---|
| 1+ | $134.560 |
| 5+ | $131.570 |
| 10+ | $128.450 |
| 36+ | $126.890 |
| 60+ | $125.370 |
| 108+ | $119.230 |
Price for:Each
Minimum: 1
Multiple: 1
$134.56
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWMSC006H12B2S6T
Newark Part No.27AM4930
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id200A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.01ohm
Transistor Case StyleWeEnPACK-B2
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.5V
Power Dissipation278W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
200A
Drain Source On State Resistance
0.01ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
WeEnPACK-B2
Rds(on) Test Voltage
18V
Power Dissipation
278W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate