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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWMSC016H12B1P6T
Newark Part No.27AM4932
Technical Datasheet
Available to Order
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Quantity | Price |
---|---|
1+ | $69.480 |
5+ | $66.430 |
10+ | $63.350 |
32+ | $60.220 |
64+ | $56.860 |
112+ | $55.860 |
256+ | $54.370 |
Price for:Each
Minimum: 1
Multiple: 1
$69.48
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWMSC016H12B1P6T
Newark Part No.27AM4932
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id85A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.02ohm
Transistor Case StyleWeEnPACK-B1
No. of Pins18Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.5V
Power Dissipation146W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
85A
Drain Source On State Resistance
0.02ohm
No. of Pins
18Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
WeEnPACK-B1
Rds(on) Test Voltage
18V
Power Dissipation
146W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate