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WNSC2M75120R6Q
Silicon Carbide MOSFET, Single, N Channel, 53.9 A, 1.2 kV, 0.09 ohm, TO-247
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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWNSC2M75120R6Q
Newark Part No.27AM4941
Technical Datasheet
Available to Order
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| Quantity | Price |
|---|---|
| 1+ | $9.960 |
| 10+ | $8.760 |
| 25+ | $7.800 |
| 50+ | $7.370 |
| 100+ | $6.530 |
| 480+ | $5.660 |
| 720+ | $5.500 |
Price for:Each
Minimum: 1
Multiple: 1
$9.96
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWNSC2M75120R6Q
Newark Part No.27AM4941
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id53.9A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.09ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.5V
Power Dissipation366W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
53.9A
Drain Source On State Resistance
0.09ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
366W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate