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![AMPHENOL LTW 8P-03BFFB-SL7001 IGBT Module, Dual [Half Bridge], 200 A, 2.2 V, 590 W, 150 °C, Module](https://canada.newark.com/productimages/standard/en_US/4612613.jpg)
ManufacturerAMPHENOL LTW
Manufacturer Part No8P-03BFFB-SL7001Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.95B1854
Product RangeF Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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Product Information
ManufacturerAMPHENOL LTW
Manufacturer Part No8P-03BFFB-SL7001Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.95B1854
Product RangeF Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current200A
Continuous Collector Current200A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation590W
Power Dissipation Pd590W
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max600V
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Product Overview
The CM200DU-12F is a dual Trench gate design IGBTMOD™ Module designed for use in switching applications. It consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation
590W
Collector Emitter Voltage V(br)ceo
600V
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation Pd
590W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
F Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
